\(T_{v\,p}=v^2_{boom}*\cfrac{molar\,mass*10^{-3}}{2*8.3144}\)
\(T_{v\,p}=\cfrac{3}{2}T_{boom}\)
In the case of \(MgO_3Ti\) with, \(Z_m=22+12+8*3=58\) a density of \(3.36\,gcm^{-3}\) and molar mass of \(120.17\,gmol^{-1}\). Its \(T_{v\,p}\) is,
\(v_{boom}=3.4354*\cfrac{3360}{58}=199.01\)
\(T_{v\,p}=199.01^2*\cfrac{120.17*10^{-3}}{2*8.3144}=286.21\,K\) or \(13.06\,^oC\)
For \(ZnTiO_3\),
\(T_{v\,p}=\cfrac{3}{2}*354.41=531.62\,K\) or \(258.46\,^ oC\)
For \(TiCaO_3\),
\(T_{v\,p}=\cfrac{3}{2}*354.41=531.62\,K\) or \(258.46\,^ oC\)
For \(TiCaO_3\),
\(350.91\,K\lt T_{v\,p}\lt402.0\,K\) or \(77.76\,^oC\lt T_{v\,p}\lt128.85\,^oC\)
For \(FeTiO_3\),
\(458.79\,K\lt T_{v\,p}\lt476.50\,K\) or \(185.64\,^oC\lt T_{v\,p}\lt203.36\,^oC\)
For \(MnTiO_3\),
\(T_{v\,p}=437.01\,K\) or \(163.83\,^oC\)
It seems that only by reducing the density of high value \(T_{v\,p}\) perozskites can \(T_{v\,p}\) at room temperature be achieved. For example a \(82.60\%\) \(MnTiO_3\) has a \(T_{v\,p}\) of
\(T_{v\,p}=0.8260^2*437.01=298.16\,K\) or \(25.01\,^oC\)
The rest of the \(100\%\), \(17.40\%\) can be with \(Fe\), \(FeTiO_3\), as long as they can form into the same crystal structure.
The rest of the \(100\%\), \(17.40\%\) can be with \(Fe\), \(FeTiO_3\), as long as they can form into the same crystal structure.
Reducing density can only reduce \(T_{v\,p}\); \(T_{v\,p}\) cannot be increased this way. Density can only be reduced given a crystalline structure.
It is likely that \(v_p\) provides the most number of freed particles that will act as charge carriers. Super-superconductor...The difference between \(v_p\) and \(v_{rms}\) is,
\(v_p=\sqrt{\cfrac{2}{3}}v_{rms}=0.667v_{rms}\)
\(v_p\) should be used instead of \(v_{rms}\); we should set \(v_{p}=\sqrt{\cfrac{2RT}{nM_m}}=v_{boom}\ne v_{rms}\) such that \(T=T_{boom}\).
And it rains again...
\(v_p=\sqrt{\cfrac{2}{3}}v_{rms}=0.667v_{rms}\)
\(v_p\) should be used instead of \(v_{rms}\); we should set \(v_{p}=\sqrt{\cfrac{2RT}{nM_m}}=v_{boom}\ne v_{rms}\) such that \(T=T_{boom}\).
And it rains again...
