and the artifacts that it creates. This is what I thought that would reduce such ringing artifacts,
θ for diamond cubic crystals will be,
OA=OC=34√23a
OH=14√23a
θ=arcsin(OHOC)=arcsin(13)=19.47o.
where C is at the first layer and is bonded to the next layer of silicon is at O. The next pull does not form up the bond along OA, but it is at 19.47o from O. Bonds similar to CO form up else where in the crystal. After four steps, because OH=14AH, the atom needed at A falls into place. At each step, a sheet of atoms is shifted into place.
Good night...